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MBD101 の電気的特性と機能

MBD101のメーカーはON Semiconductorです、この部品の機能は「Schottky Barrier Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBD101
部品説明 Schottky Barrier Diodes
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MBD101 Datasheet, MBD101 PDF,ピン配置, 機能
MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
VR
PF
Value
7.0
280
225
Unit
V
mW
Derate above 25°C
MBD101
MMBD101LT1
2.2 mW/°C
1.8
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 7.0 10
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD − 0.88 1.0 pF
Forward Voltage
(IF = 10 mA)
Reverse Leakage
(VR = 3.0 V)
VF
− 0.5 0.6
V
IR − 0.02 0.25 mA
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
http://onsemi.com
SILICON SCHOTTKY
BARRIER DIODES
TO−92 2−Lead
CASE 182
STYLE 1
1
22
CATHODE
1
ANODE
MARKING
DIAGRAMS
MBD
101
AYWW G
G
SOT−23 (TO−236)
3 CASE 318
STYLE 8
1 4M M G
2G
3 11
CATHODE
ANODE
(Pin 2 Not Connected)
A = Assembly Location
Y = Year
WW = Work Week
4M = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MBD101
TO−92 5000 Units / Box
MBD101G
TO−92 5000 Units / Box
(Pb−Free)
MMBD101LT1
SOT−23 3000 / Tape & Reel
MMBD101LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBD101/D

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MBD101 pdf, ピン配列
MBD101, MMBD101LT1
PACKAGE DIMENSIONS
TO−92 TWO LEAD
TO−226AC
CASE 182−06
ISSUE L
AB
SEATING
PLANE
P
R
L
K
XX
D
H
G
V
12
N
N
C
D
ÉÉÉÉJ
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.050 BSC
H 0.100 BSC
J 0.014 0.016
K 0.500 −−−
L 0.250 −−−
N 0.080 0.105
P −−− 0.050
R 0.115 −−−
V 0.135 −−−
MILLIMETERS
MIN MAX
4.45 5.21
4.32 5.33
3.18 4.19
0.407 0.533
1.27 BSC
2.54 BSC
0.36 0.41
12.70 −−−
6.35 −−−
2.03 2.66
−−− 1.27
2.93 −−−
3.43 −−−
STYLE 1:
PIN 1. ANODE
2. CATHODE
http://onsemi.com
3


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共有リンク

Link :


部品番号部品説明メーカ
MBD101

Schottky Barrier Diodes

ON Semiconductor
ON Semiconductor
MBD101

(MBD101 / MBD101LT1) SILICON SCHOTTKY BARRIER DIODES

Motorola Semiconductors
Motorola Semiconductors
MBD101G

Schottky Barrier Diodes

ON Semiconductor
ON Semiconductor
MBD101LT1

(MBD101 / MBD101LT1) SILICON SCHOTTKY BARRIER DIODES

Motorola Semiconductors
Motorola Semiconductors


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