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J308のメーカーはON Semiconductorです、この部品の機能は「JFET VHF/UHF Amplifiers」です。 |
部品番号 | J308 |
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部品説明 | JFET VHF/UHF Amplifiers | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとJ308ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
J308
JFET VHF/UHF Amplifiers
N−Channel — Depletion
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
IGF
PD
TJ
Tstg
Value
25
25
10
350
2.8
−65 to +125
−65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
http://onsemi.com
1
23
CASE 29−11, STYLE 5
TO−92 (TO−226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 μAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Min
− 25
—
—
− 1.0
− 1.0
− 2.0
12
12
24
—
2 SOURCE
Typ Max
Unit
— — Vdc
— −1.0 nAdc
— −1.0 μAdc
Vdc
— −6.5
— −4.0
— −6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
J308/D
1 Page J308
50 Ω
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50 Ω
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 − 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539−002D.
C5 = C6 = 5000 pF Erie (2443−000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 μH Miller #9230−30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).
Figure 1. 450 MHz Common−Gate Amplifier Test Circuit
70
60
VDS = 10 V
50
IDSS
40 +25 °C
70
TA = −55°C
+25 °C
60
50
40
30 +150°C 30
20
+25 °C
20
−55 °C
10 +150°C 10
−5.0 −4.0 −3.0 −2.0 −1.0
ID − VGS, GATE−SOURCE VOLTAGE (VOLTS)
IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 2. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = −55°C
+25 °C
20
+150°C
15 +25 °C
10 −55 °C
+150°C
5.0
0
5.0 4.0 3.0 2.0 1.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
0
Figure 3. Forward Transconductance
versus Gate−Source Voltage
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = −2.3 V =
10
Yos VGS(off) = −5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
10 120
RDS
96
7.0
72
Cgs
4.0 48
Cgd 24
1.0
00
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance and Junction
Capacitance versus Gate−Source Voltage
http://onsemi.com
3
3Pages A
R
SEATING
PLANE
B
P
L
K
XX
H
V
G
C
1
N
N
J308
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
CASE 29−11
ISSUE AL
D
J
SECTION X−X
STYLE 5:
PIN 1.
2.
3.
DRAIN
SOURCE
GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 −−−
L 0.250 −−−
N 0.080 0.105
P −−− 0.100
R 0.115 −−−
V 0.135 −−−
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 −−−
6.35 −−−
2.04 2.66
−−− 2.54
2.93 −−−
3.43 −−−
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
J308/D
6 Page | |||
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