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VN10LMのメーカーはMotorola Semiconductorsです、この部品の機能は「TMOS FET Transistor」です。 |
部品番号 | VN10LM |
| |
部品説明 | TMOS FET Transistor | ||
メーカ | Motorola Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとVN10LMダウンロード(pdfファイル)リンクがあります。 Total 4 pages
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
1 SOURCE
Order this document
by VN10LM/D
VN10LM
1
23
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current – Continuous(1)
– Pulsed(2)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VGS
VGSM
ID
IDM
PD
60 Vdc
± 20 Vdc
± 40 Vpk
0.3 Adc
1.0
1.0 Watts
8.0 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
– 40 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
Zero–Gate–Voltage Drain Current
(VDS = 45 V, VGS = 0)
Gate–Body Leakage Current
(VGS = –15 V, VDS = 0)
Gate–Body Leakage Current
(VGS = 15 V, VDS = 0)
V(BR)DSS
IDSS
IGSS1
IGSS2
v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width 300 µs, Duty Cycle.
Min
60
—
—
—
Typ Max Unit
— — Vdc
0.1 10 µAdc
— 100 nAdc
—
–100
nAdc
TMOS is a registered trademark of Motorola, Inc.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 Page PACKAGE DIMENSIONS
VN10LM
A
B
R
SEATING
P PLANE
L
F
K
XX
H
V
G
12 3
N
NC
D
J
SECTION X–X
CASE 029–05
(TO–226AE)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.290 0.310
C 0.125 0.165
D 0.018 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.018 0.024
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.135 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.44 5.21
7.37 7.87
3.18 4.19
0.46 0.56
0.41 0.48
1.15 1.39
2.42 2.66
0.46 0.61
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
3.43 –––
3.43 –––
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ VN10LM データシート.PDF ] |
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