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PDF 1N5448ARL Data sheet ( Hoja de datos )
| Número de pieza | 1N5448ARL | |
| Descripción | Silicon Tuning Diodes | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These are epitaxial passivated abrupt junction tuning diodes designed for electronic
tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,
providing solid–state reliability to replace mechanical tuning methods.
• Excellent Q Factor at High Frequencies
• Guaranteed Capacitance Change — 2.0 to 30 V
• Capacitance Tolerance — 10% and 5.0%
• Complete Typical Design Curves
1N5446ARL
1N5448ARL
1N5456A
6.8 – 100 pF
30 VOLTS
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS(1)
1 CASE 51–02
(DO–204AA)
Rating
Symbol
Value
Unit
Reverse Voltage
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30 Volts
PD 400 mW
2.67 mW/°C
Operating Junction Temperature Range
TJ
+175
°C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C)
Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 150°C)
Series Inductance (f = 250 MHz, lead length ≈ 1/16″)
Case Capacitance (f = 1.0 MHz, lead length ≈ 1/16″)
Diode Capacitance Temperature Coefficient
(Note 6) (VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
LS
CC
TCC
30
—
—
—
—
—
— — Vdc
— 0.02 µAdc
— 20
4.0 — nH
0.17 —
pF
300 — ppm/°C
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
Min
(Nom –10%)
Nom
Max
(Nom +10%)
1N5446ARL
1N5448ARL
1N5456A
16.2
19.8
90
1. Indicates JEDEC Registered Data.
18
22
100
19.8
24.2
110
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min Max
2.6 3.2
2.6 3.2
2.7 3.3
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Min
350
350
175
(Replaces 1N5441A/D)
5–6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
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