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PZT651T1GのメーカーはON Semiconductorです、この部品の機能は「NPN Silicon Planar Epitaxial Transistor」です。 |
部品番号 | PZT651T1G |
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部品説明 | NPN Silicon Planar Epitaxial Transistor | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとPZT651T1Gダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PZT651T1G
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT--223 package which is designed for medium power surface
mount applications.
SOT--223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
Features
High Current: 2.0 A
The SOT--223 package can be soldered using wave or reflow
Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
PNP Complement is PZT751T1
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
SOT--223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol Value
Unit
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current
Total Power Dissipation @ TA = 25C
(Note 1)
Derate above 25C
VCEO
VCBO
VEBO
IC
PD
60 Vdc
80 Vdc
5.0 Vdc
2.0 Adc
0.8 W
6.4 mW/C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg -- 65 to 150 C
TJ 150 C
Characteristic
Symbol
Max
Unit
Thermal Resistance from
Junction--to--Ambient in Free Air
RθJA
156 C/W
Maximum Temperature for Soldering TL 260 C
Purposes
Time in Solder Bath
10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum
recommended footprint.
12 3
4 TO--261AA
CASE 318E--04
STYLE 1
1
AYW
651 G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
PZT651T1/D
1 Page PZT651T1G
300
270
240 TJ = 125C
NPN
VCE = 2.0 V
210
180 25C
150
120
90 -- 55C
60
30
0
10 20
50 100 200 500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain
250
225
TJ = 125C
200
PNP
VCE = --2.0 V
175
150 25C
125
100 -- 55C
75
50
25
0
--10 -- 20
-- 50 --100 -- 200 -- 500 --1.0 A --2.0 A --4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
NPN
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
100 200
500 1.0 A
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
2.0 A 4.0 A
NPN
1.0
0.9
0.8 TJ = 25C
0.7
0.6
0.5
0.4
0.3 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
50 100 200 500
Figure 5. Collector Saturation Region
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
--50
PNP
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
--100 --200
--500 --1.0 A
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltages
--2.0 A --4.0 A
PNP
--1.0
--0.9
--0.8 TJ = 25C
--0.7
--0.6
--0.5
--0.4
--0.3
IC = --500 mA
IC = --2.0 A
--0.2
--0.1
IC = --10 mA
IC = --100 mA
0
--0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20
IB, BASE CURRENT (mA)
--50 --100 --200 --500
Figure 6. Collector Saturation Region
http://onsemi.com
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部品番号 | 部品説明 | メーカ |
PZT651T1 | NPN Silicon Planar Epitaxial Transistor | Motorola Semiconductors |
PZT651T1G | NPN Silicon Planar Epitaxial Transistor | ON Semiconductor |