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Número de pieza | 1N5148 | |
Descripción | Silicon Tuning Diodes | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
Designed for electronic tuning and harmonic–generation applications, and provide
solid–state reliability to replace mechanical tuning methods.
• Guaranteed High–Frequency Q
• Guaranteed Wide Tuning Range
• Standard 10% Capacitance Tolerance
• Complete Typical Design Curves
1N5148
1N5148A
6.8 – 47 pF EPICAP
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
RF Power Input(1)
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 60 Volts
IF 250 mAdc
Pin 5.0 Watts
PD 400 mW
2.67 mW/°C
1 CASE 51–02
(DO–204AA)
Device Dissipation @ TC = 25°C
Derate above 25°C
PC 2.0 Watts
13.3 mW/°C
Junction Temperature
TJ +175 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 55 Vdc, TA = 25°C)
Reverse Voltage Leakage Current (VR = 55 Vdc, TA = 150°C)
Series Inductance (f = 250 MHz, L ≈ 1/16″)
Case Capacitance (f = 1.0 MHz, L ≈ 1/16″)
Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz)
1. The RF power input rating assumes that an adequate heatsink is provided.
V(BR)R
IR
LS
CC
TCC
60
—
—
—
—
—
70 — Vdc
— 0.02 µAdc
— 20
4.0 — nH
0.17 —
pF
200 — ppm/°C
Device
1N5148
1N5148A
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Min Typ Max
42.3 47 51.7
44.7 47 49.3
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Min
200
200
α
VR = 4.0 Vdc, f = 1.0 MHz
Min Typ
0.43 0.45
0.43 0.45
TR, Tuning Ratio
C4/C60
f = 1.0 MHz
Min Typ
3.2 3.4
3.2 3.4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1N5148.PDF ] |
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