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3N128 の電気的特性と機能

3N128のメーカーはMotorola Semiconductorsです、この部品の機能は「MOSFET AMPLIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 3N128
部品説明 MOSFET AMPLIFIER
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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3N128 Datasheet, 3N128 PDF,ピン配置, 機能
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vDs
vDg
vgs
id
Pd
Tj, Tstg
Value
+ 20
+ 20
±10
50
330
2.2
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
3N128
CASE 20-03, STYLE 7
TO-72 (TO-206AF)
MOSFET
AMPLIFIER
N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Gate-Source Breakdown Voltaged)
(Iq = -10/nAdc, V DS = 0)
Gate Reverse Current
(VGS = -8.0Vdc,VDS = 0)
(Vqs = "8.0 Vdc, VDS = 0, TA = 125°C)
Gate Source Cutoff Voltage
(Vqs = 15 Vdc, Id = 50 ,uAdc)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(2)
<VDS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = 15 Vdc, Iq = 5.0 mAdc* f =, 1.0 kHz)
Input Admittance
(VdS = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Output Conductance
(VDS = 15 Vdc, Dl = 5.0 mAdc, f = 200 MHz)
Forward Transconductance
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Input Capacitance
(Vds = 15 Vdc, Id = 5.0 mAdc, f =1.0 MHz)
Reverse Transfer Capacitance
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(Vds = 15 Vdc, Id = 5.0 mAdc, f = 200 MHz)
Power Gain
(Vds = 15 Vdc, Dl = 5.0 mAdc, f = 200 MHz)
(1) Caution Destructive Test, can damage gate oxide beyond operation.
(2) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
Symbol
V (BR)GSS
'GSS
v GS(off)
-50
-
-0.5
Max
-
0.05
5.0
-8.0
DUnit
Vdc
nAdc
Vdc
'DSS
5.0
25 mAdc
lYfsl
Re(yis)
Re(yos)
Re(yfs )
Cjss
C rss
NF
PG
5000
5000
0.05
13.5
12,000
800
500
7.0
0.35
/imhos
/umhos
/amhos
/AFTlhOS
PF
PF
5.0 dB
23 dB
6-73

1 Page





3N128 pdf, ピン配列
3N128
FIGURE 7 - REVERSE TRANSADMITTANCE (y rs ) COMPONENTS
+0.05
9rs
°<-0.,5
~"
brs
4.0 6.0
ID, DRAIN CURRENT (mA)
FIGURE 9 - POWER GAIN AND NOISE FIGURE
versus DRAIN CURRENT
1
f = 200 MHz
v }S= 15 Vdc
PG
FIGURE 8 - OUTPUT ADMITTANCE (yos) COMPONENTS
| 1.2
e
~E
1.0
I
J
§§ °- 8
II
££r- r—
6
°
0.4
OO
S^:
1
I 2.0
4.0 6.0
ID. DRAIN CURRENT (mA)
8.0
FIGURE 10 - POWER GAIN AND NOISE FIGURE
versus DRAIN VOLTAGE
1
f = 200 MHz
10 = 5.0 mA
PG
NF
NF
ID. DRAIN CURRENT (mAI
Vd, DRAIN VOLTAGE (VOLTS)
FIGURE 11 - THIRD ORDER INTERMODULATION DISTORTION
I
VDS = 15 Vdc
fi = 200.5 MHz
3RD ORDER
PC INTS
*?/
1/
FUNDAMENTAL 0UTPU T
10 = 0. »4)SSt olDSS
ID = 0.1 IDSS
1 'l
/i
if
-180
-180
/ id = o. 3lDSSt o IDSS
/3RD ORDER IMD OUTPUT
fJi
-140 -120 -100 -80 -60 -40 -20
+20
INPUT POWER PER TONE (dBm)
Figure 11 shows the typical third order intermodulatioh dis-
tortion (IMD) performance of the 3N128 at 200 MHz.
Both fundamental output and third order IMD output charac-
teristics are plotted. The curves have been extrapolated to show
the third order intermodulation output intercept point.
Performance for drain currents from IdsS*° 0.1 'DSS' is given.
The power gain and noise figure test amplifier shown in Figure 12
was used to generate the IMD data.
FIGURE 12 - POWER GAIN, NOISE FIGURE AND INTERMODULATION DISTORTION TEST CIRCUIT
6-75
AWGLI = 4 1/2 turns #20
wire, 3/16" diameter,
approximately 1/2" long, tapped 1 turn from
ground end.
AWGL2 = 3-1/2 turns #20
wire, 3/8" diameter,
approximately 1/2" long
"Leadless-type disc capacitor
^Neutralization fixed for a Transistor having a
Typical value of C rss (0. 13pF)


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共有リンク

Link :


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