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Datasheet 2N5484 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N5484
部品説明 JFET VHF/UHF AMPLIFIER
メーカ Motorola
ロゴ Motorola ロゴ 
プレビュー
Total 7 pages
		
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2N5484 Datasheet, 2N5484 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET VHF/UHF Amplifiers
N–Channel — Depletion
3
GATE
1 DRAIN
2N5484
2N5486
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Reverse Gate – Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDG
VGSR
ID
IG(f)
PD
25
25
30
10
350
2.8
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
2N5484
2N5486
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
2N5484
2N5486
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5484
2N5486
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5484
2N5486
2N5484
2N5486
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
2N5484
2N5486
2N5484
2N5486
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yfs
Re(yis)
yos
Re(yos)
Re(yfs)
Min
– 25
– 0.3
– 2.0
1.0
8.0
3000
4000
2500
3500
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— –1.0 nAdc
– 0.2
µAdc
Vdc
— – 3.0
— – 6.0
— 5.0 mAdc
— 20
mmhos
— 6000
— 8000
mmhos
— 100
— 1000
mmhos
— 50
— 75
mmhos
— 75
— 100
mmhos
——
——
4–116
Motorola Small–Signal Transistors, FETs and Diodes Device Data

1 Page



2N5484 pdf, ピン配列
2N5484 2N5486
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
C1
L1
C5
RgL3
C6
C2
VGS
C3
C4
CASE
L2
C7
TO 500
LOAD
COMMON
VDS
+15 V
ID = 5.0 mA
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
VALUE
100 MHz 400 MHz
7.0 pF
1.8 pF
1000 pF
17 pF
3.0 pF
1.0 pF
1–12 pF 0.8–8.0 pF
1–12 pF 0.8–8.0 pF
0.0015 µF 0.001 µF
0.0015 µF 0.001 µF
3.0 µH*
0.2 µH**
0.15 µH* 0.03 µH**
0.14 µH* 0.022 µH**
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16long,
3/8I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4long,
3/8I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4I.D.
(AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
10
8.0
6.0
f = 400 MHz
4.0
NOISE FIGURE
(Tchannel = 25°C)
6.5
ID = 5.0 mA
5.5
4.5
3.5
f = 400 MHz
VDS = 15 V
VGS = 0 V
2.0
100 MHz
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Effects of Drain–Source Voltage
2.5 100 MHz
1.5
0 2.0 4.0 6.0 8.0 10 12
ID, DRAIN CURRENT (mA)
Figure 4. Effects of Drain Current
INTERMODULATION CHARACTERISTICS
+ 40
+ 20
0 VDS = 15 Vdc
f1 = 399 MHz
– 20 f2 = 400 MHz
– 40
3RD ORDER INTERCEPT
– 60
– 80
– 100
– 120
– 140
– 160
– 120
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
– 100 – 80 – 60 – 40 – 20
Pin, INPUT POWER PER TONE (dB)
0
+ 20
Figure 5. Third Order Intermodulation Distortion
14
4–118
Motorola Small–Signal Transistors, FETs and Diodes Device Data


3Pages


2N5484 電子部品, 半導体
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
2N5484 2N5486
20
10
7.0 gig @ IDSS
5.0
3.0 grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
big @ IDSS
20 30
big @ 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 14. Input Admittance (yig)
0.5
0.3
0.2 brg @ IDSS
0.1
0.07
0.05
0.03 0.25 IDSS
0.02
0.01
0.007
0.005
10
gig @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 15. Reverse Transfer Admittance (yrg)
10
7.0 gfg @ IDSS
5.0
3.0 gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3 bfg @ IDSS
0.2 brg @ 0.25 IDSS
0.1
10
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 16. Forward Transfer Admittance (yfg)
1.0
0.7 bog @ IDSS, 0.25 IDSS
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
gog @ IDSS
gog @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 17. Output Admittance (yog)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–121

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