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2N3960UB の電気的特性と機能

2N3960UBのメーカーはMicrosemiです、この部品の機能は「NPN SILICON SWITCHING TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N3960UB
部品説明 NPN SILICON SWITCHING TRANSISTOR
メーカ Microsemi
ロゴ Microsemi ロゴ 




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2N3960UB Datasheet, 2N3960UB PDF,ピン配置, 機能
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
DEVICES
2N3960
2N3960UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
PT (1)
Top, Tstg
Value
12
20
4.5
0.4
-65 to +200
Unit
Vdc
Vdc
Vdc
W
°C
Note:
Derate linearly 2.3mW/°C above TA = +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10μAdc
Collector-Base Cutoff Current
VCB = 20Vdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
VCE = 10Vdc, VBE = 2.0Vdc
Symbol
Min.
Max. Unit
V(BR)CEO
12
Vdc
ICBO
IEBO
ICEX1
ICEX2
10 μAdc
10 μAdc
1 μAdc
5 ηAdc
TO-18 – 2N3960
UB – 2N3960UB
T4-LDS-0161 Rev. 1 (100514)
Page 1 of 4

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2N3960UB pdf, ピン配列
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min Max Min Max
.178 .195 4.52 4.95
.170 .210 4.32 5.33
.209 .230 5.31 5.84
.100 TP
2.54 TP
.016 .021 0.41 0.53
.500 .750 12.70 19.05
.016 .019 0.41 0.48
.050 1.27
.250 6.35
.100 2.54
.040 1.02
.028 .048 0.71 1.22
.036 .046 0.91 1.17
.010 0.25
45° TP
45° TP
Note
6
7,11
7
12
7
7
5
4
3
9
10
6
NOTES:
1. Dimensions are in inches.
* 2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within
.007 inch (0.18
mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
10. Symbol r applied to both inside corners of tab.
11. Measured in a zone beyond .250 (6.35 mm) from the seating plane.
12. Measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane.
* 13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* 14. Lead 1 = emitter, lead 2 = base, and case is collector.
*FIGURE 1. Physical dimensions (similar to TO-18)
T4-LDS-0161 Rev. 1 (100514)
Page 3 of 4


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部品番号部品説明メーカ
2N3960UB

NPN SILICON SWITCHING TRANSISTOR

Microsemi
Microsemi


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