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PDF MM8000 Data sheet ( Hoja de datos )
| Número de pieza | MM8000 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MM8000
MM8001
MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"c
PD
Tj. Tstg
Value
30
40
3.5
0.4
3.5
20
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
dC = 5.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(VCE = 28 Vdc, Ib = 0)
ON CHARACTERISTICS
DC Current Gain
C(l = 50 mAdc, VCE = 15 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(lC = 25 mAdc, Vqe = 15 Vdc, f = 200 MHz)
MM8000
MM8001
MM8002
(lC = 50 mAdc, V C E = 15 Vdc, f = 200 MHz)
MM8000
MM8001
MM8002
C(l = 100 mAdc, Vce = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, El = 0, f = 1.0 MHz)
Noise Figure (Figure 1)
(lC = 10 mAdc, Vce = 15 Vdc, f = 200 MHz)
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
dC = 10 mAdc, V C e = 1 5 Vdc, f = 200 MHz)
MM8000
MM8001
MM8002
Symbol
VCEO(sus)
V(BR)CBO
v (BR)EBO
ICEO
hFE
fT
Cobo
NF
G pe
30
40
3.5
—
30
550
700
1000
700
900
1200
700
900
1000
—
—
—
Typ
—
—
—
—
—
-
—
2.7
11.4
Max
—
—
—
20
—
-
3.5
—
—
Unit
Vdc
Vdc
Vdc
/jAdc
—
MHz
pF
dB
dB
7-128
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MM8000.PDF ] | |
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