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2N4403 の電気的特性と機能

2N4403のメーカーはMotorola Semiconductorsです、この部品の機能は「GENERAL PURPOSE TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N4403
部品説明 GENERAL PURPOSE TRANSISTOR
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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2N4403 Datasheet, 2N4403 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2N4402
2N4403*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
40
5.0
600
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
40 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2–32
Motorola Small–Signal Transistors, FETs and Diodes Device Data

1 Page





2N4403 pdf, ピン配列
2N4402 2N4403
TRANSIENT CHARACTERISTICS
25°C 100°C
30
20 Ceb
10
7.0
5.0
3.0
VCC = 30 V
IC/IB = 10
2.0
10
7.0
1.0
0.7
5.0
Ccb 0.5
QT
0.3 QA
0.2
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30
0.1
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100 100
70
IC/IB = 10
70
50 50
tr @ VCC = 30 V
30
tr @ VCC = 10 V
30
td @ VBE(off) = 2 V
20
td @ VBE(off) = 0
20
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20 30 50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
100
70
50
30
20
10
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts= ts – 1/8 tf
20 30 50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 7. Storage Time
2–34
Motorola Small–Signal Transistors, FETs and Diodes Device Data


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