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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2N3903
2N3904*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
60
6.0
200
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
60 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–3
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
2N3903 2N3904
300
200
100
70
50
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0
10
100
50
20
10
5
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 13. Input Impedance
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
VCE = 1.0 V
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–7