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C44C11 PDF Data sheet ( 特性 )

部品番号 C44C11
部品説明 NPN SILICON EPITAXIAL POWER TRANSISTORS
メーカ CDIL
ロゴ CDIL ロゴ 


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C44C11 Datasheet, C44C11 PDF,ピン配置, 機能
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTORS
C44C8, C44C11
TO - 220
Plastic Package
Medium Power Switching and Amplifier Applications
Complementary C45C Series
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector- Emitter Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current Continuous
Peak *
Base Current Continuous
Power Dissipation TA=25ºC
TC=25ºC
Operating & Storage Junction
Temperature Range
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
PD
Tj, Tstg
C44C8
C44C11
70 90
60 80
5
4
6
2
1.67
30
-55 to +150
Thermal Resistance
Junction to Ambient
Junction to Case
Rth (j-a)
Rth (j-c)
75
4.2
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector- Emitter Sustaing Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCEO(sus)* IC=100mA, IB=0
C44C8
C44C11
ICES VCE=Rated VCES
IEBO VEB=5V, IC=0
hFE* IC=0.2A, VCE=1V
IC=2A, VCE=1V
VCE(sat) * IC=1A, IB=50mA
VBE(sat) * IC=1A, IB=100mA
60
80
-
-
100
20
-
-
Dynamic Characteristics
Collector Capacitance
Current Gain Bandwidth Product
Ccbo VCB=10V, IE=0
f=1MHz
fT VCE=4V, IC=20mA
-
-
Switching Characteristics
DESCRIPTION
SYMBOL TEST CONDITION MIN
-
-
-
-
-
-
-
-
-
50
TYP
Delay Time + Rise Time
td + tr IC=1A, IB1=1B2=0.1A
Storage Time
ts VCC=30V, tp=25µs
Fall Time
tf
* Pulse Test Pulse Width =300ms, Duty Cycle<2%
-
-
100
500
75
UNIT
V
V
V
A
A
W
ºC
ºC/W
ºC/W
MAX UNIT
-V
-V
10 µA
100 µA
220
-
0.5 V
1.3 V
100 pF
- MHz
MAX UNIT
- ns
- ns
- ns
Continental Device India Limited
Data Sheet
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