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MT9HTF12872AY の電気的特性と機能

MT9HTF12872AYのメーカーはMicronです、この部品の機能は「1GB DDR2 SDRAM UDIMM」です。


製品の詳細 ( Datasheet PDF )

部品番号 MT9HTF12872AY
部品説明 1GB DDR2 SDRAM UDIMM
メーカ Micron
ロゴ Micron ロゴ 




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MT9HTF12872AY Datasheet, MT9HTF12872AY PDF,ピン配置, 機能
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
DDR2 SDRAM UDIMM
MT9HTF3272AY – 256MB
MT9HTF6472AY – 512MB
MT9HTF12872AY – 1GB
Features
240-pin, unbuffered dual in-line memory module
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
256MB (32 Meg x 72), 512MB (64 Meg x 72), or 1GB
(128 Meg x 72)
VDD = VDDQ 1.8V
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Single rank
Multiple internal device banks for concurrent
operation
Programmable CAS latency (CL)
Posted CAS# additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Figure 1: 240-Pin UDIMM (MO-237 R/C A/F)
Module height 30.0mm (1.18in)
Options
Operating temperature
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)1
Package
240-pin DIMM (lead-free)
Frequency/CL2
2.5ns @ CL = 5 (DDR2-800)3, 4
2.5ns @ CL = 6(DDR2-800)3, 4
3.0ns @ CL = 6 (DDR2-667)
3.75ns @ CL = 5 (DDR2-53E)
5.0ns @ CL = 5 (DDR2-40E)
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Contact Micron for product availability.
4. Not available in 256MB density.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
553
400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

1 Page





MT9HTF12872AY pdf, ピン配列
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
Table 5: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8,1 1Gb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT9HTF12872A(I)Y-80E__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-800__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-667__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-53E__
1GB 128 Meg x 72
MT9HTF12872A(I)Y-40E__
1GB 128 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Notes: 1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT9HTF6472AY-667C2.
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
3 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.


3Pages


MT9HTF12872AY 電子部品, 半導体
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Err_Out#
VDD/VDDQ
VDDSPD
VREF
VSS
NC
NF
NU
RFU
Type
I/O
Output
Output
(open drain)
Supply
Supply
Supply
Supply
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I2C bus.
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod-
ule VDD.
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: VDD/2.
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
6 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.

6 Page



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部品番号部品説明メーカ
MT9HTF12872AY

1GB DDR2 SDRAM UDIMM

Micron
Micron


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