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MT8HTF3264HDYのメーカーはMicronです、この部品の機能は「256MB DDR2 SDRAM SODIMM」です。 |
部品番号 | MT8HTF3264HDY |
| |
部品説明 | 256MB DDR2 SDRAM SODIMM | ||
メーカ | Micron | ||
ロゴ | |||
このページの下部にプレビューとMT8HTF3264HDYダウンロード(pdfファイル)リンクがあります。 Total 19 pages
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT8HTF3264HDY – 256MB
MT8HTF6464HDY – 512MB
MT8HTF12864HDY – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB
(128 Meg x 64)
• VDD = 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
Options
• Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
– Industrial (–40°C ≤ TA ≤ +85°C)1
• Package
– 200-pin DIMM (lead-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-553)3
– 5.0ns @ CL = 3 (DDR2-400)3
Marking
D
T
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
–
–
–
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
– 553
– 400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1 Page 256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
Table 5: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M16,1 1Gb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT8HTF12864HDY-80E__ 1GB 128 Meg x 64
MT8HTF12864HTY-80E__ 1GB 128 Meg x 64
MT8HTF12864HDY-800__ 1GB 128 Meg x 64
MT8HTF12864HTY-800__ 1GB 128 Meg x 64
MT8HTF12864HDY-667__ 1GB 128 Meg x 64
MT8HTF12864HTY-667__ 1GB 128 Meg x 64
MT8HTF12864HDY-53E__ 1GB 128 Meg x 64
MT8HTF12864HTY-53E__ 1GB 128 Meg x 64
MT8HTF12864HDY-40E__ 1GB 128 Meg x 64
MT8HTF12864HTY-40E__ 1GB 128 Meg x 64
Module
Bandwidth
6.4 GB/s
6.4 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
5.3 GB/s
4.3 GB/s
4.3 GB/s
3.2 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
5-5-5
6-6-6
6-6-6
5-5-5
5-5-5
4-4-4
4-4-4
3-3-3
3-3-3
Notes: 1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT8HTF6464HDY-667D3.
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
3 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
3Pages 256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Err_Out#
VDD/VDDQ
VDDSPD
VREF
VSS
NC
NF
NU
RFU
Type
I/O
Output
Output
(open drain)
Supply
Supply
Supply
Supply
–
–
–
–
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I2C bus.
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod-
ule VDD.
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: VDD/2.
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
6 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
6 Page | |||
ページ | 合計 : 19 ページ | ||
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部品番号 | 部品説明 | メーカ |
MT8HTF3264HDY | 256MB DDR2 SDRAM SODIMM | Micron |