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MBRM110ET1G の電気的特性と機能

MBRM110ET1GのメーカーはON Semiconductorです、この部品の機能は「Surface Mount Schottky Power Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRM110ET1G
部品説明 Surface Mount Schottky Power Rectifier
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MBRM110ET1G Datasheet, MBRM110ET1G PDF,ピン配置, 機能
MBRM110ET1G,
NRVBM110ET1G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low IR Extends Battery Life
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
150C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = V (> 400 V)
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics:
POWERMITEis JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
M
1E1G
2
M = Date Code
1E1 = Device Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM110ET1G
NRVBM110ET1G
POWERMITE
(PbFree)
POWERMITE
(PbFree)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MBRM110ET3G
POWERMITE 12,000 /
(PbFree)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 3
1
Publication Order Number:
MBRM110E/D

1 Page





MBRM110ET1G pdf, ピン配列
MBRM110ET1G, NRVBM110ET1G
100E-3
10E-3
1E-3
100E-6
10E-6
1E-6
100E-9
10E-9
0
TJ = 150C
TJ = 100C
TJ = 25C
2.5 5 7.5
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E-3
10E-3
1E-3
100E-6
10E-6
1E-6
100E-9
10E-9
10 0
TJ = 150C
TJ = 100C
TJ = 25C
2.5 5 7.5
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc FREQ = 20 kHz
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
165
0.7
SQUARE
0.6 WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
dc
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1.6
1000
TJ = 25C
100
10
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
3


3Pages





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共有リンク

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部品番号部品説明メーカ
MBRM110ET1

Surface Mount Schottky Power Rectifier

ON Semiconductor
ON Semiconductor
MBRM110ET1G

Surface Mount Schottky Power Rectifier

ON Semiconductor
ON Semiconductor


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