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MBRM110ET1GのメーカーはON Semiconductorです、この部品の機能は「Surface Mount Schottky Power Rectifier」です。 |
部品番号 | MBRM110ET1G |
| |
部品説明 | Surface Mount Schottky Power Rectifier | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMBRM110ET1Gダウンロード(pdfファイル)リンクがあります。 Total 5 pages
MBRM110ET1G,
NRVBM110ET1G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low IR Extends Battery Life
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
150C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = V (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITE is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
M
1E1G
2
M = Date Code
1E1 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MBRM110ET1G
NRVBM110ET1G
POWERMITE
(Pb−Free)
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MBRM110ET3G
POWERMITE 12,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 3
1
Publication Order Number:
MBRM110E/D
1 Page MBRM110ET1G, NRVBM110ET1G
100E-3
10E-3
1E-3
100E-6
10E-6
1E-6
100E-9
10E-9
0
TJ = 150C
TJ = 100C
TJ = 25C
2.5 5 7.5
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E-3
10E-3
1E-3
100E-6
10E-6
1E-6
100E-9
10E-9
10 0
TJ = 150C
TJ = 100C
TJ = 25C
2.5 5 7.5
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc FREQ = 20 kHz
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
165
0.7
SQUARE
0.6 WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
dc
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1.6
1000
TJ = 25C
100
10
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ MBRM110ET1G データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MBRM110ET1 | Surface Mount Schottky Power Rectifier | ON Semiconductor |
MBRM110ET1G | Surface Mount Schottky Power Rectifier | ON Semiconductor |