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BC848CDXV6T1G の電気的特性と機能

BC848CDXV6T1GのメーカーはON Semiconductorです、この部品の機能は「Dual General Purpose Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 BC848CDXV6T1G
部品説明 Dual General Purpose Transistors
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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BC848CDXV6T1G Datasheet, BC848CDXV6T1G PDF,ピン配置, 機能
BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT563 which is designed for
low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are PbFree Devices
MAXIMUM RATINGS
Rating
Symbol BC847 BC848 Unit
Collector Emitter Voltage
VCEO
45
30
V
Collector Base Voltage
VCBO
50
30
V
Emitter Base Voltage
VEBO 6.0 5.0
V
Collector Current Continuous IC 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR4 @ Minimum Pad
Symbol
PD
RqJA
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
Symbol
PD
RqJA
Max
500
4.0
250
Unit
mW
mW/°C
°C/W
TJ, Tstg 55 to +150
°C
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
BC847CDXV6T1
6
1
SOT563
CASE 463A
MARKING DIAGRAMS
1x M G
G
1
1x = Device Code
x = G or M
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 4
1
Publication Order Number:
BC847CDXV6T1/D

1 Page





BC848CDXV6T1G pdf, ピン配列
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
1000
900
800
150°C
VCE = 1 V
700
600 25°C
500
400
300 55°C
200
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 20
0.9
0.8 55°C
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.30
0.25
IC/IB = 20
0.20
150°C
0.15 25°C
0.10
55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
3


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部品番号部品説明メーカ
BC848CDXV6T1

Dual General Purpose Transistors

ON Semiconductor
ON Semiconductor
BC848CDXV6T1G

Dual General Purpose Transistors

ON Semiconductor
ON Semiconductor


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