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WPM3023 の電気的特性と機能

WPM3023のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WPM3023
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WPM3023 Datasheet, WPM3023 PDF,ピン配置, 機能
WPM3023
Single P-Channel, -30V, -3.9A, Power MOSFET
VDS (V)
-30
Typical RDS(on) (mΩ)
37 @ VGS=-10V
50 @ VGS=-4.5V
WPM3023
Http://www.sh-willsemi.com
Descriptions
The WPM3023 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3023 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PF = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3023-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 July.2016- Rev.1.0

1 Page





WPM3023 pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM3023
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS
VGS = 0 V, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS =-24V, VGS = 0V
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250uA
Drain-to-source On-resistance
RDS(on)
VGS = -10V, ID = -4.5A
VGS =-4.5V, ID = -4A
Forward Transconductance
gFS VDS = -5 V, ID = -3.3A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0MHz, VDS =
-15 V
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
QG( TOT)
QG( TH)
QGS
QGD
VGS = -4.5 V, VDS = -10 V,
ID =-5.0 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = -10 V, VDD =-15 V,
ID=-4A, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -1A
Min
-30
-1.0
-0.6
Typ Max Unit
-1
±100
V
uA
nA
-1.8 -3.0 V
37 54
mΩ
50 74
4 7S
778
85 pF
68
6.8
0.55
nC
2.5
2.1
11.2
4.7
ns
50
8
-0.75 -1.2 V
Will Semiconductor Ltd. 3 July.2016- Rev.1.0


3Pages


WPM3023 電子部品, 半導体
WPM3023
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 145_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 July.2016- Rev.1.0

6 Page



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共有リンク

Link :


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