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WPM2081 の電気的特性と機能

WPM2081のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WPM2081
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WPM2081 Datasheet, WPM2081 PDF,ピン配置, 機能
WPM2081
Single P-Channel, -20V, -3.2A, Power MOSFET
WPM2081
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (m)
43 @ VGS=-4.5V
55 @ VGS=-2.5V
Descriptions
The WPM2081 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2081 is Pb-free.
Features
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PB = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM2081-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/06/03- Rev.1.0

1 Page





WPM2081 pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM2081
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = -250uA
VDS =-16V, VGS = 0V
VDS = 0 V, VGS = ±12V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = -250uA
VGS =-4.5V, ID = -3.2A
VGS = -2.5V, ID = -3.0A
VGS = -1.8V, ID = -2.5A
VDS = -5 V, ID = -4A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0MHz, VDS =
-6 V
VGS = -4.5 V, VDS = -10 V,
ID =-3.3 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = -4.5 V, VDS =-6 V,
ID=-3.3A, RG=6
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -3.2A
Min
-20
-0.35
Typ
-0.65
43
55
72
6
1062
146
124
10
0.8
1.8
1.7
11.4
6.8
67.6
16.8
-0.8
Max Unit
-1
±100
V
uA
nA
-1 V
65
81 m
110
16 S
pF
nC
ns
-1.5 V
Will Semiconductor Ltd. 3 2016/06/03- Rev.1.0


3Pages


WPM2081 電子部品, 半導体
Transient thermal response (Junction-to-Ambient)
WPM2081
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 155_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Will Semiconductor Ltd. 6 2016/06/03- Rev.1.0

6 Page



ページ 合計 : 7 ページ
 
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[ WPM2081 データシート.PDF ]


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共有リンク

Link :


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