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WPM2049B の電気的特性と機能

WPM2049BのメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WPM2049B
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WPM2049B Datasheet, WPM2049B PDF,ピン配置, 機能
WPM2049B
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V)
-20
Typical Rds(on) (Ω)
0.440@ VGS=-4.5V
0.640@ VGS=-2.5V
0.880@ VGS=-1.8V
WPM2049B
Http://www.sh-willsemi.com
Descriptions
The WPM2049B is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2049B is Pb-free and
Halogen-free.
Features
Trench Technology
ESD protection up to 2 kV
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
DFN1006-3L
Pin configuration (Top view)
E*
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
E = Device Code
* = Month (A~Z)
Marking
Order information
Device
WPM2049B-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd. 1 Jul, 2015 - Rev.1.0

1 Page





WPM2049B pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM2049B
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = -250uA
VDS =-16 V, VGS = 0V
VDS = 0 V, VGS =±5V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance e
VGS(TH)
RDS(on)
VGS = VDS, ID = -250uA
VGS = -4.5V, ID = -0.45A
VGS = -2.5V, ID = -0.35A
VGS = -1.8V, ID = -0.25A
Forward Transconductance
gFS VDS = -5 V, ID = -0.45A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f =1.0MHz, VDS =
-10 V
VGS = -4.5 V, VDS = -10 V,
ID = -0.45A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = -4.5 V, VDS = -10V,
ID=-0.45A, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -0.15A
Min
-20
-0.45
-0.5
Typ
-0.55
440
640
880
1.25
74.5
10.8
10.2
0.88
0.07
0.15
0.28
45
140
1500
2100
-0.65
Max Unit
V
-1 uA
±5 uA
-0.85
700
900
1230
V
mΩ
S
pF
nC
ns
-1.1 V
Will Semiconductor Ltd. 3 Jul, 2015 - Rev.1.0


3Pages


WPM2049B 電子部品, 半導体
WPM2049B
1 Duty cycle=0.5
0.1
0.01
0.2
0.1
0.05
0.02
1E-3
single pulse
1E-4
1E-6
1E-5
1E-4
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 455°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1E-3 0.01
0.1
1
10
Square Wave Pulse Duration (sec)
100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Jul, 2015 - Rev.1.0

6 Page



ページ 合計 : 7 ページ
 
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共有リンク

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部品番号部品説明メーカ
WPM2049

MOSFET ( Transistor )

WillSEMI
WillSEMI
WPM2049B

MOSFET ( Transistor )

WillSEMI
WillSEMI


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