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WNMD2182のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | WNMD2182 |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | WillSEMI | ||
ロゴ | |||
このページの下部にプレビューとWNMD2182ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
WNMD2182
WNMD2182
Dual N-Channel, 20V, 9.5A, Power MOSFET
Http//:www.sh-willsemi.com
VDS (V)
Rds(on) (mΩ)
12@ VGS=4.5V
20 14@ VGS=3.1V
17@ VGS=2.5V
ESD HBM 2000V
PDFN2.9×2.8-8L
Descriptions
The WNMD2182 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2182 is Pb-free and
Halogen-free.
D2 D2 D1 D1
8 7 65
1
23
4
S2 G2 S1 G1
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
ESD Protected Class-2 (HBM 2000V)
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
8 765
2182
NDYW
1 23 4
2182
ND
YW
= Device Code
= Special Code
= Year & Week
Marking
Order information
Device
Package
Shipping
WNMD2182-8/TR PDFN2.9×2.8-8L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/09/08 – Rev.1.0
1 Page Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNMD2182
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS
VGS = 0 V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS =16 V, VGS = 0V
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±10V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 6.5A
Drain-to-source On-resistance
RDS(on)
VGS = 3.1V, ID = 5.5A
VGS = 2.5V, ID = 3.0A
Forward Transconductance
gFS VDS = 5.0 V, ID = 4.8A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz, VDS =
10 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate-to-Source Charge
QG(TH)
QGS
VGS = 4.5 V, VDD = 10 V,
ID = 7A
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 6 V,
ID=4.8A, RG=6 Ω
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20
0.4
8
10
12
Typ Max Unit
V
1 uA
±5 uA
0.65 1.0 V
12 17
14 20 mΩ
17 30
17 S
670
130 pF
103
10
0.7
nC
1.5
3
26
48.8
189.6
135
ns
0.7 1.5 V
Will Semiconductor Ltd.
3 2016/09/08 – Rev.1.0
3Pages Package outline dimensions
WNMD2182
Will Semiconductor Ltd.
6 2016/09/08 – Rev.1.0
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ WNMD2182 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
WNMD2180 | MOSFET ( Transistor ) | WillSEMI |
WNMD2182 | MOSFET ( Transistor ) | WillSEMI |