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WNMD2178 の電気的特性と機能

WNMD2178のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WNMD2178
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WNMD2178 Datasheet, WNMD2178 PDF,ピン配置, 機能
WNMD2178
WNMD2178
Dual N-Channel, 20V, 6A, Power MOSFET
www.sh-willsemi.com
Vsss (V)
Typ Rss(on) (mΩ)
23.5@ VGS=4.5V
24@ VGS=4.0V
20
26@ VGS=3.1V
29@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2178 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2178 is available in
DFN2X2-4L package. Standard Product WNMD2178
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2X2-4L
34
2
1
Bottom View
DFN2X2-4L
43
S2 G2
2178
NDYW
S1 G1
12
4: Source 2 3: Gate 2
1: Source 1 2: Gate 1
2178 = Device Code
N D =Special Code
Y = Year
W = WeekA~z
Pin configuration (TOP view)& Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2178-4/TR
Package
DFN2X2-4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 July.2015 Rev. 1.0

1 Page





WNMD2178 pdf, ピン配列
Absolute Maximum ratings
Parameter
Source to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VSS = 0 V)
Source Current (pulse)Note.c
Source Current (DC)
Channel Temperature
Storage Temperature Range
Note.c PW≤10μs, duty cycle≤1%;
WNMD2178
Symbol
VSSS
VGSS
IS(pulse)
IS
Tch
Tstg
10 s Steady State
20
±12
60
6
150
-55 to 150
Unit
V
A
A
°C
°C
Both the FET1 and the FET2 are measured. Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 ISSS
G2
G1
S2
S1
TEST CIRCUIT 2 IGSS
When FET1 is
measured, between
A GATE and SOURCE
of FET2 are shorted.
VSS
VGS
G2
G1
AA
S2
S1
TEST CIRCUIT 3 VGS(off)
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
G2
G1
VGS
S2
AA
TEST CIRCUIT 4 | yfs |
ΔIS/ΔVGS
G2
VSS
S1
G1
VGS
S2
AA
VSS
S1
Will Semiconductor Ltd. 3 July.2015 Rev. 1.0


3Pages


WNMD2178 電子部品, 半導体
100
TEST CIRCUIT 6
V =0V
GS
VGS=2.5V
10
1
0.5 1.0 1.5
VFS-S-Source to Source Voltage-V
10
TEST CIRCUIT 3
Vss=10V
1
WNMD2178
125oC
0.1 75oC
25oC
-25oC
0.01
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V -Gate to Source Voltage-V
GS
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
5
TEST CIRCUIT 9
4
VGS=4.5V,
V =10V,
SS
I =6A
S
3
FORWARD TRANSFER CHARACTERISTICS
2
1
0
0 5 10 15 20
Qg(nC)
DYNAMIC INPUT CHARACTERISTICS
Will Semiconductor Ltd. 6 July.2015 Rev. 1.0

6 Page



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共有リンク

Link :


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