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WNMD2176 の電気的特性と機能

WNMD2176のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WNMD2176
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WNMD2176 Datasheet, WNMD2176 PDF,ピン配置, 機能
WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V
76@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement
MOS Field Effect Transistor.Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge.This device is suitable for use
in DC-DC conversion,power switch and charging
circuit. Standard Product WNMD2176 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2
6 54
1 23
G1 S2 G2
Pin configuration (Top view)
6 54
2176
NDYW
1 23
2176
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Driver for Relay, Solenoid, Motor, LED etc.
Power supply converters circui t
Load/Power Switching for portable device
Marking
Order information
Device
Package
Shipping
WNMD2176-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.0

1 Page





WNMD2176 pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNMD2176
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS = ±10V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
VGS(TH)
RDS(on)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 2.5A
VGS = 3.1V, ID = 2.0A
VGS = 2.5V, ID = 1.5A
Forward Transconductance
gFS VDS = 5.0 V, ID = 7.0A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1MHz, VDS = 10
V
VGS = 4.5 V, VDS = 10 V,
ID =2.5 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = 4.5 V, VDS =10 V,
RL=10, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20.5
0.5
40
45
51
Typ
0.78
55
66
75
11
190
45
36
3.1
0.1
0.55
1.1
12.2
12.5
29.6
9.8
Max Unit
V
100 nA
±5 uA
1.0 V
90
110 mΩ
130
16 S
pF
nC
ns
1.5 V
Will Semiconductor Ltd. 3 Jan, 2015 - Rev.1.0


3Pages


WNMD2176 電子部品, 半導体
Package outline dimensions
SOT -23-6L
WNMD2176
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
θ
Dimensions In Millimeters
Min Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0° 8°
Will Semiconductor Ltd.
6
Dimensions In Inches
Min Max
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0° 8°
Jan, 2015 - Rev.1.0

6 Page



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