DataSheet.jp

WNM6002 の電気的特性と機能

WNM6002のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WNM6002
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




このページの下部にプレビューとWNM6002ダウンロード(pdfファイル)リンクがあります。
Total 7 pages

No Preview Available !

WNM6002 Datasheet, WNM6002 PDF,ピン配置, 機能
WNM6002
Single N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6002 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM6002 is Pb-free and
Halogen-free.
WNM6002
Http//:www.sh-willsemi.com
SOT-323
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
62*
1
2
62 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6002-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0

1 Page





WNM6002 pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance b, c
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(on)
Forward Transconductance
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
gFS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = 250uA
VDS =60V, VGS = 0V
VDS = 0 V, VGS =±20V
VGS = VDS, ID = 250uA
VGS = 10V, ID = 0.37A
VGS = 4.5V, ID = 0.2A
VDS =15V, ID =0.25A
VGS = 0 V,
f = 1.0 MHz,
VDS = 25V
VGS = 10 V,
VDD = 30 V,
ID =0.37A
VDD=30V, ID=0.2A,
VGEN=10V,RG=10
VGS = 0 V, IS =0.3A
WNM6002
Min Typ Max Unit
60 V
1 uA
±5 uA
0.8 1.3 2 V
1.4 2.0
1.7 2.6
0.42 S
23.37
7.33
5.2
1.2
0.15
0.21
0.12
pF
nC
7.6
5.1
ns
24.6
10
0.9 1.5 V
Will Semiconductor Ltd. 3 Sep, 2013 - Rev.1.0


3Pages


WNM6002 電子部品, 半導体
WNM6002
1
0.5
0.1 0.2
0.1
0.05
PDM
0.02
0.01
0.01
1E-3
1E-6
Single pulse
1E-5 1E-4
1E-3
0.01
0.1
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 325°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1 10 100 1000
Square Wave Pulse Duration (sec)
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Sep, 2013 - Rev.1.0

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ WNM6002 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
WNM6001

N-Channel MOSFET

Will Semiconductor
Will Semiconductor
WNM6002

MOSFET ( Transistor )

WillSEMI
WillSEMI


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap