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WNM2077のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | WNM2077 |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | WillSEMI | ||
ロゴ | |||
このページの下部にプレビューとWNM2077ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
WNM2077
WNM2077
Single N-Channel, 20V, 0.54A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.420@ VGS=4.5V
0.580@ VGS=2.5V
0.840@ VGS=1.8V
ESD Protected
Descriptions
The WNM2077 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2077 is Pb-free.
Features
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package SOT-723
Applications
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging
Will Semiconductor Ltd.
1
Http//:www.willsemi.com
SOT-723
D
3
12
GS
Pin configuration (Top view)
NB = Device Code
* = Month (A~Z)
Marking
Order information
Device
WNM2077-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Sep, 2015 - Rev.1.0
1 Page Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
gFS
Drain-to-source On-resistance b, c
RDS(on)
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = 250uA
VDS = 16V, VGS = 0V
VDS = 0 V, VGS = ±10V
VGS = VDS, ID = 250uA
VDS = 10V, ID = 0.35A
VGS = 4.5V, ID = 0.35A
VGS = 3.1V, ID = 0.20A
VGS = 2.5V, ID = 0.20A
VGS = 1.8V, ID = 0.20A
VGS = 1.5V, ID = 0.04A
VGS = 0 V,
f = 1MHz,
VDS = 10 V
VGS = 4.5 V,
VDS = 10 V,
ID = 0.54A
VGS = 4.5 V,
VDD = 10 V,
ID=0.54 A,
RG=6 Ω
VGS = 0 V, IS = 0.3A
WNM2077
Min Typ Max Unit
20 V
1 uA
±5 uA
0.45 0.70 1.0
V
0.85 S
420 600
500 700
580 800 mΩ
840 1300
1100 1600
30
7 pF
5
1.07
0.12
nC
0.32
0.14
7.2
9.5
19.6
4.6
ns
0.85 1.5 V
Will Semiconductor Ltd.
3
Sep, 2015 - Rev.1.0
3Pages Package outline dimensions
SOT-723
WNM2077
Will Semiconductor Ltd.
6
Sep, 2015 - Rev.1.0
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ WNM2077 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
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WNM2077 | MOSFET ( Transistor ) | WillSEMI |