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WNM01N11 の電気的特性と機能

WNM01N11のメーカーはWillSEMIです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 WNM01N11
部品説明 MOSFET ( Transistor )
メーカ WillSEMI
ロゴ WillSEMI ロゴ 




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WNM01N11 Datasheet, WNM01N11 PDF,ピン配置, 機能
WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V)
110
Typical Rds(on) ()
0.230@ VGS=10V
0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N11 is Pb-free and
Halogen-free.
SOT-23-6L
DDS
65 4
123
DDG
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
 
1N11 = Device Code
MA= Special Code
YW= Year&Week
Marking
Order information
Device
Package
Shipping
WNM01N11-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/02/25 – Rev. 1.0

1 Page





WNM01N11 pdf, ピン配列
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance b, c
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(on)
Forward Trans conductance
gfs
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
Test Conditions
VGS = 0V, ID = 250uA
VDS = 90V, VGS = 0V
VDS = 0 V, VGS =±20V
VGS = VDS, ID = 250uA
VGS = 10V, ID = 1.4A
VGS =4.5V, ID = 1.3A
VDS = 10V, ID = 3A
VGS = 0 V,
f = 1.0 MHz,
VDS = 25 V
VGS = 10 V,
VDD = 80 V,
ID = 1.5 A
VGS = 10 V,
VDD = 50 V,
RL=50 ,
RG=3.3
VGS = 0 V, IS = 1A
WNM01N11
Min Typ Max Unit
110 V
1 uA
±100 nA
1 1.9 2.5
V
230
250
310
350
m
1.1 S
300
25.6 pF
15.6
7.5
0.7
1.1
nC
2.1
11.8
13.2
32.8
4.8
0.8 1.2
ns
V
Will Semiconductor Ltd.
3 2016/02/25 – Rev. 1.0


3Pages


WNM01N11 電子部品, 半導体
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
WNM01N11
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
6 2016/02/25 – Rev. 1.0

6 Page



ページ 合計 : 7 ページ
 
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共有リンク

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部品番号部品説明メーカ
WNM01N10

MOSFET ( Transistor )

WillSEMI
WillSEMI
WNM01N11

MOSFET ( Transistor )

WillSEMI
WillSEMI


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