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PDF NDDP010N25AZ Data sheet ( Hoja de datos )
| Número de pieza | NDDP010N25AZ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NDDP010N25AZ
Power MOSFET
250V, 10A, 420mΩ, N-Channel
www.onsemi.com
Features
High Speed Switching
Low Gate Charge
ESD Diode-Protected Gate
100% Avalanche Tested
Pb-Free, Halogen Free and RoHS Compliance
Electrical Connection
2,4
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW10s, duty cycle1%
VDSS
VGSS
ID
IDP
Power Dissipation
Tc=25C
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *1
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
IS
EAS
TL
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *2
Note : *1 VDD=50V, L=1mH, IAV=5A (Fig.1)
*2 Insertion mounted
Symbol
RJC
RJA
Value
250
30
10
40
1
52
150
55 to
+150
10
15.5
260
Unit
V
V
A
A
W
C
C
A
mJ
C
Value
2.40
125
Unit
C/W
1. Gate
2. Drain
3. Source
4. Drain
1
3
Packing Type:TL
Marking
10N25
AZTL
LOT No.
4
12
3
DPAK
4
1
2
IPAK
3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Ordering & Package Information
Device
NDDP010N25AZT4H
NDDP010N25AZ-1H
Package
DPAK(TP-FA),
SC-63, TO-252
IPAK(TP),
SC-64, TO-251
Shipping
700pcs. / reel
500pcs. / bag
Memo
Pb-Free
and
Halogen Free
© Semiconductor Components Industries, LLC, 2014
November 2014 - Rev. 2
1
Publication Order Number :
NDDP010N25AZ/D
1 page  
Package Dimensions
NDDP010N25AZT4H
DPAK / TP-FA
unit : mm
1:Gate
2:Drain
3:Source
4:Drain
NDDP010N25AZ
Recommended
Soldering Footprint
7.0
1.5
2.3 2.3
www.onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDDP010N25AZ.PDF ] | |
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