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STK5F4U3E2D-E PDF Data sheet ( 特性 )

部品番号 STK5F4U3E2D-E
部品説明 Intelligent Power Module
メーカ ON Semiconductor
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STK5F4U3E2D-E Datasheet, STK5F4U3E2D-E PDF,ピン配置, 機能
STK5F4U3E2D-E
Intelligent Power Module (IPM)
600 V, 50 A
Overview
This “Inverter Power IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module
(Dual-In line Package). Output stage uses IGBT / FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection
(OCP) with a Fault Detection output flag. Internal Boost diodes are provided
for high side gate boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control inputs and status outputs are at low voltage levels directly
compatible with microcontrollers.
A single power supply drive is enabled through the use of bootstrap circuits
for upper power supplies
Built-in dead-time for shoot-thru protection
Having open emitter output for low side IGBTs ; individual shunt resistor
per phase for OCP
Externally accessible embedded thermistor for substrate temperature
measurement
Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output
stage by external input
Certification
UL1557 (File number : E339285)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
Collector-emitter voltage
VCC
VCE
P to NU,NV,NW, surge < 500 V *1
P to U, V, W, U to NU, V to NV, or W to NW
450
600
Output current
Io
P, N, U, V, W terminal current
P, N, U, V, W terminal current, Tc = 100C
±50
±25
Output peak current
Iop P, N, U, V, W terminal current, PW = 1 ms
±100
Pre-driver supply voltage
VD1, 2, 3, 4 VB1 to VS1, VB2 to VS2, VB3 to VS3, VDD to VSS *2
20
Input signal voltage
VIN HIN1, 2, 3, LIN1, 2, 3, terminal
0.3 to VDD
FAULT terminal voltage
VFAULT FAULT terminal
0.3 to VDD
Maximum loss
Pd IGBT per channel
62.5
Junction temperature
Tj IGBT, FRD
150
Storage temperature
Tstg
40 to +125
Operating temperature
Tc IPM case
20 to +100
Tightening torque
MT A screw part at use M4 type screw *3
1.17
Withstand Voltage
Vis 50 Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2 : Terminal voltage : VD1 = VB1 to VS1, VD2 = VB2 to VS2, VD3 = VB3 to VS3, VD4 = VDD to VSS.
*3 : Flatness of the heat-sink should be 0.25 mm and below.
*4 . Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October 2016 - Rev. 1
1
Publication Order Number :
STK5F4U3E2D-E/D

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