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PDF STK5F1U3E2D-E Data sheet ( Hoja de datos )

Número de pieza STK5F1U3E2D-E
Descripción Intelligent Power Module
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No Preview Available ! STK5F1U3E2D-E Hoja de datos, Descripción, Manual

STK5F1U3E2D-E
Advance Information
Intelligent Power Module (IPM)
600 V, 50 A
Overview
This “Inverter Power IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module
(Dual-In line Package). Output stage uses IGBT / FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection
(OCP) with a Fault Detection output flag. Internal Boost diodes are provided
for high side gate boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over-current protection current is adjustable with the
external resistor, “RSD”
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Supply voltage
Collector-emitter voltage
VCC
VCE
P to N, surge < 500 V *1
P to U, V, W or U, V, W to N
Output current
Io
P, N, U, V, W terminal current
P, N, U, V, W terminal current, Tc = 100C
Output peak current
Iop P, N, U, V, W terminal current, PW = 1 ms
Pre-driver supply voltage
VD1, 2, 3, 4 VB1 to VS1, VB2 to VS2, VB3 to VS3, VDD to VSS *2
Input signal voltage
VIN HIN1, 2, 3, LIN1, 2, 3
FAULT terminal voltage
VFAULT FAULT terminal
Maximum loss
Pd IGBT per channel
Ratings
450
600
±50
±25
±76
20
0.3 to VDD
0.3 to VDD
67.5
Junction temperature
Tj IGBT,FRD
150
Storage temperature
Operating temperature
Tightening torque
Tstg
Tc IPM case
MT A screw part at use M4 type screw *3
40 to +125
20 to +100
1.17
Withstand voltage
Vis 50 Hz sine wave AC 1 minute *4
2000
Reference voltage is N terminal = VSS terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2 : Terminal voltage : VD1 = VB1 to VS1, VD2 = VB2 to VS2, VD3 = VB3 to VS3, VD4 = VDD to VSS.
*3 : Flatness of the heat-sink should be 0.25 mm and below.
*4 : Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October 2016 - Rev. P2
1
Publication Order Number :
STK5F1U3E2D-E/D

1 page




STK5F1U3E2D-E pdf
STK5F1U3E2D-E
Test Circuit
(The tested phase : U+ shows the upper side of the U phase and Ushows the lower side of the U phase)
ICE / IR(BD)
U+ V+ W+ U- V- W-
M 42 42 42 34 30 26 VD1=15V
N 34 30 26 38 38 38
U(BD)
M1
N 20
V(BD)
4
20
W(BD)
7
20
VD2=15V
VD3=15V
VD4=15V
1M
2
4
5
7
8
19
20 N
Fig.1
ICE
A
VCE
VCE(sat) (Test by pulse)
U+
M 42
V+ W+ U-
42 42 34
V-
30
W-
26
VD1=15V
N 34 30 26 17 19 21
m 10 11 12 13 14 15
VD2=15V
VD3=15V
VD4=15V
5V
1M
2
4
5
V Ic
7
VCE(SAT)
8
19
mN
20
21
VF (Test by pulse)
U+ V+ W+ U- V- W-
M 42 42 42 34 30 26
N 34 30 26 38 38 38
Fig.2
M
V VF
IF
N
Fig.3
ID
VD1 VD2 VD3
M1 4 7
N2 5 8
VD4
19
20
ID
AM
VD*
N
Fig.4
www.onsemi.com
5

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STK5F1U3E2D-E arduino
Maximum Phase current
STK5F1U3E2D-E
Motor Current vs. Frequency
(Sine wave oparation,Vcc=300V,cosθ=0.8,ON Duty=96%)
50
40
30
20
10
0
0 5 10 15
Switching Frequency : fc (KHz)
20
Fig.13 Maximum sinusoidal phase current as function of switching frequency
at Tc = 100C, VCC = 300 V
Switching waveform
Turn on
Fig. 14 IGBT Turn-on. Typical turn-on waveform at Tc = 100C, VCC = 300 V, Ic = 25 A
Turn off
Fig. 15 IGBT Turn-off. Typical turn-off waveform Tc = 100C, VCC = 300 V, Ic = 25 A
www.onsemi.com
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