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Número de pieza | EMB05N03GH | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB05N03GH (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
5mΩ
ID 20A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB05N03GH
LIMITS
±20
20
13
80
20
20
10
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/12
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMB05N03GH
12
ID = 2 0 A
G a te C h a rg e C h a ra c te ris tic s
10
8
6
V DS =5V
15V
10V
4
10 4
10 3
10 2
C a p a c ita n c e C h a ra c te ristic s
C is s
C o ss
C rss
2
0
0 10 20 30 40 50 60 70
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
25
30
1 0 0
M a xim u m S a fe O p e ra tin g A re a
R D S ( O N ) Lim it
100μ s
10
1m s
10m s
100m s
1
1s
10s
DC
0.1
VG S = 1 0 V
S in g le P u lse
R JA = 1 2 5 ° C / W
T A = 2 5 ° C
0 .0 1
0.1 1
10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/8/12
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB05N03GH.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB05N03GH | Field Effect Transistor | Excelliance MOS |
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