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PDF EMB09P03H Data sheet ( Hoja de datos )
| Número de pieza | EMB09P03H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
9.5mΩ
ID
‐70A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09P03H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐20A, RG=25Ω
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐70
‐50
‐140
‐20
20
50
26
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐15A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/3/22
2.5
°C / W
50
p.1
1 page  
EMB09P03H
10
I D = ‐ 25A
Gate Charge Characteristics
8
VD S = ‐ 5V
‐ 10V
‐ 15V
6
5000
4000
3000
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
4 2000
2 1000
Coss
0
0
15 30
45
60 75
Q g ‐ Gate Charge( nC )
0 Crss
0 5 10 15 20 25 30
‐ VD S , Drain‐Source Voltage( V )
300
200
100 R d s ( o n ) Limit
50
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
20 1ms
10
5
2
1
0.5
0.5
10ms
D1C00ms
VG S = ‐10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
D u ty C y cle = 0 .5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 0‐2
1 0‐1
Transient Therm al Response Curve
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C =2 .5 °C /W
3 .TJ ‐ TC = P * R θ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2012/3/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB09P03H.PDF ] | |
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