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PDF SVS11N65F Data sheet ( Hoja de datos )
| Número de pieza | SVS11N65F | |
| Descripción | TRANSISTOR | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
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Silan
Microelectronics
SVS11N65T/F/K_Datasheet
11A, 650V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N65T/F/K is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
11
23
3 TO-262-3L
1.Gate 2.Drain 3.Source
FEATURES
11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
1
23
TO-220F-3L
1
23
TO-220-3L
ORDERING INFORMATION
Part No.
SVS11N65T
SVS11N65F
SVS11N65K
Package
TO-220-3L
TO-220F-3L
TO-262-3L
Marking
SVS11N65T
SVS11N65F
SVS11N65K
Material
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVS11N65T
86
0.69
Ratings
SVS11N65F
650
±30
11
6.7
44
23
0.18
250
-55～+150
-55～+150
SVS11N65K
79
0.63
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 8
1 page  
Silan
Microelectronics
TYPICAL TEST CIRCUIT
SVS11N65T/F/K_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVS11N65F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVS11N65F | TRANSISTOR | Silan Microelectronics |
| SVS11N65K | TRANSISTOR | Silan Microelectronics |
| SVS11N65T | TRANSISTOR | Silan Microelectronics |
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