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PDF SVD50N06MJ Data sheet ( Hoja de datos )
| Número de pieza | SVD50N06MJ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silan Microelectronics | |
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SVD50N06T/D/MJ_Datasheet
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD50N06T is an N-channel enhancement mode high voltage
MOS field effect transistor which is produced using Silan new
structure VDMOS technology. The improved planar stripe cell
and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
It's widely used in electronic ballasts and low power SMPS.
FEATURES
∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD50N06T
SVD50N06D
SVD50N06DTR
SVD50N06MJ
Package
TO-220-3L
TO-252-2L
TO-252-2L
TO-251J-3L
Marking
SVD50N06T
SVD50N06D
SVD50N06D
SVD50N06MJ
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2013.01.21
Page 1 of 9
1 page  
Silan
Microelectronics
SVD50N06T/D/MJ_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
103 Area(SVD50N06T)
Operation in This Area
is Limited by RDS(ON)
102
101
100
10-1
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
100 101
102
Drain Source Voltage - VDS(V)
Figure 9-3. Max. Safe Operating
Area(SVD50N06MJ)
103
Operation in This Area
is Limited by RDS(ON)
102
101
100
10-1
100µs
1ms
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
100 101
Drain Source Voltage - VDS(V)
102
Figure 8. On-resistance Variation
2.5 vs. Temperature
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=25A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
103 Area(SVD50N06D)
Operation in This Area
is Limited by RDS(ON)
102 100µs
1ms
101
100
10-1
10ms
DC
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
100 101
102
Drain Source Voltage - VDS(V)
Figure 10. Maximum Drain Current vs.
Case Temperature
50
40
30
20
10
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2013.01.21
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SVD50N06MJ.PDF ] | |
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