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SW230N04B の電気的特性と機能

SW230N04BのメーカーはSEMIPOWERです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 SW230N04B
部品説明 MOSFET ( Transistor )
メーカ SEMIPOWER
ロゴ SEMIPOWER ロゴ 




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SW230N04B Datasheet, SW230N04B PDF,ピン配置, 機能
SAMWIN
SW230N04B
N-channel TO-220 MOSFET
Features
TO-220
High ruggedness
RDS(ON) (Max4.0m)@VGS=10V
Gate Charge (Typical 190nC)
Improved dv/dt Capability
100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 40V
ID : 230A
RDS(ON) :4.0mΩ
2
1
3
Order Codes
Item
1
Sales Type
SW P 230N04
Marking
SW230N04B
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
40
230*
144.9*
920
± 25
900
302
5
288.7
2.3
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
0.43
51.2
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
1/5

1 Page





SW230N04B pdf, ピン配列
SAMWIN
Fig. 1. On-state characteristics
SW230N04B
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
3/5


3Pages





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部品番号部品説明メーカ
SW230N04B

MOSFET ( Transistor )

SEMIPOWER
SEMIPOWER


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