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Datasheet SW22N60U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SW22N60U | MOSFET, Transistor SAMWIN
SW22N60U
N-channel TO-3P MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.35Ω)@VGS=10V ■ Gate Charge (Typ 124 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS |  SEMIPOWER | mosfet |
SW2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SW201 | Quad SPST JFET Analog Switches
DataShee
DataSheet4U.com
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DataSheet4U.com DataSheet 4 U .com
et4U.com
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DataSheet4U.c  Analog Devices data | | |
| 2 | SW201 | Quad SPST JFET Analog Switches
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DataSheet4U.c  Precision Monolithics data | | |
| 3 | SW201 | GaAs SPDT Switch DC-2 Ghz
DataSheet4U.com
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 MA-Com data | | |
| 4 | SW20N50 | N-channel Power MOSFET SAMWIN
SW20N50
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm
1
2
2 3
1. Gate 2. Drain 3. Source
General Descriptio  SAMWIN mosfet | | |
| 5 | SW20N50D | N-channel MOSFET SW20N50D
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W
Device SW20N50D
Package TO-3PN
Marking SW20N50D
Remark RoHS
Absolute Maximum Ratings
Parameter Drain-Source  Seawon mosfet | | |
| 6 | SW20N50U | MOSFET, Transistor SAMWIN
SW20N50U
N-channel TO-3P MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS SEMIPOWER mosfet | | |
| 7 | SW20N60 | N-channel Power MOSFET SAMWIN
SW20N60
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm
1
2
2 3 1
1. Gate 2. Drain 3. Source
General Descripti SAMWIN mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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