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PDF GA06JT12-247 Data sheet ( Hoja de datos )
| Número de pieza | GA06JT12-247 | |
| Descripción | Junction Transistor | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GA06JT12-247 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA06JT12-247
VDS
RDS(ON)
ID @ Tc=150°C
hFE Tc=25°C
=
=
=
=
1200 V
200 mΩ
6A
54
D
S
GD
G
S
TO-247AB
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 150 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 150 °C
Value
1200
6
1.5
ID,max = 6
@ VDS ≤ VDSmax
20
30
40
24
-55 to 175
Unit
V
A
A
A
Notes
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 6 A, Tj = 25 °C
ID = 6 A, Tj = 125 °C
ID = 6 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 6 A, Tj = 25 °C
VDS = 5 V, ID = 6 A, Tj = 175 °C
200
280 mΩ Fig. 5
370
3.1
2.9
V Fig. 4
53
33
– Fig. 5
VR = 1200 V, VGS = 0 V, Tj = 25 °C
0.5
IDSS VR = 1200 V, VGS = 0 V, Tj = 125 °C 1 μA Fig. 6
VR = 1200 V, VGS = 0 V, Tj = 175 °C
2
ISG VSG = 20 V, Tj = 25 °C
20 nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg1 of 10
1 page  
GA06JT12-247
Figure 15: Forward Bias Safe Operating Area at Tc = 25 °C
Figure 16: Turn-Off Safe Operating Area
Figure 17: Transient Thermal Impedance
Figure 18: Drain Current Derating vs. Pulse Width
Figure 19: Drain Current Derating vs. Temperature
Figure 20: Typical Gate Current Waveform
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg5 of 10
5 Page 
SPICE Model Parameters
GA06JT12-247
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/sjt/GA06JT12-247_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA06JT12-247.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.2
$
* $Date: 26-AUG-2014
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA06JT12 NPN
+ IS
5.08E-47
+ ISE
1.26E-28
+ EG
3.2
+ BF
58.31
+ BR
0.55
+ IKF
200
+ NF
1
+ NE
1.892
+ RB
5.85
+ RBM
0.9
+ IRB
1e-4
+ RE
0.1039
+ RC
0.06188
+ CJC
2.73E-10
+ VJC
3.04
+ MJC
0.448
+ CJE
6.86E-10
+ VJE
2.89
+ MJE
0.466
+ XTI
3
+ XTB
-1.33
+ TRC1
1.90E-2
+ VCEO
1200
+ ICRATING 6
+ MFG
GeneSiC_Semiconductor
*End of GA06JT12 SPICE Model
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GA06JT12-247.PDF ] | |
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