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GA50JT12-CAL の電気的特性と機能

GA50JT12-CALのメーカーはGeneSiCです、この部品の機能は「Junction Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA50JT12-CAL
部品説明 Junction Transistor
メーカ GeneSiC
ロゴ GeneSiC ロゴ 




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GA50JT12-CAL Datasheet, GA50JT12-CAL PDF,ピン配置, 機能
Die Datasheet
GA50JT12-CAL
Normally OFF Silicon Carbide
Junction Transistor
Features
210 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
VDS = 1200 V
RDS(ON)
= 20 mΩ
ID @ 25 oC = 100 A
hFE = 85
Die Size = 4.35 mm x 4.35 mm
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT12-CAL ...........................................................................................................6
Section VI: Mechanical Parameters ............................................................................................................. 10
Section VII: Chip Dimensions....................................................................................................................... 10
Section VIII: SPICE Model Parameters ........................................................................................................ 12
Section I: Absolute Maximum Ratings
(TC = 25 oC unless otherwise specified)
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Operating Junction and Storage
Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Tj, Tstg
Conditions
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.26 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
Maximum Processing Temperature
TProc
10 min. maximum
Value
1200
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Notes
Fig. 16
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 1 of 11

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GA50JT12-CAL pdf, ピン配列
Section IV: Figures
A: Static Characteristics
Die Datasheet
GA50JT12-CAL
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: On-Resistance vs. Gate Current
Figure 5: Normalized On-Resistance vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 3 of 11


3Pages


GA50JT12-CAL 電子部品, 半導体
Die Datasheet
GA50JT12-CAL
Section V: Driving the GA50JT12-CAL
Drive Topology
TTL Logic
Constant Current
High Speed Boost Capacitor
High Speed Boost Inductor
Proportional
Pulsed Power
Gate Drive Power
Consumption
High
Medium
Medium
Low
Lowest
Medium
Switching
Frequency
Low
Medium
High
High
High
N/A
Application Emphasis
Wide Temperature Range
Wide Temperature Range
Fast Switching
Ultra Fast Switching
Wide Drain Current Range
Pulse Power
Availability
Coming Soon
Coming Soon
Production
Coming Soon
Coming Soon
Coming Soon
A: Static TTL Logic Driving
The GA50JT12-CAL may be driven using direct (5 V) TTL logic after current amplification. The (amplified) current level of the supply must
meet or exceed the steady state gate current (IG,steady) required to operate the GA50JT12-CAL. The power level of the supply can be estimated
from the target duty cycle of the particular application. IG,steady is dependent on the anticipated drain current ID through the SJT and the DC
current gain hFE, it may be calculated from the following equation. An accurate value of the hFE may be read from Figure 6.
TTL
Gate Signal
5/0V
TTL i/p
5V
IG,steady
SiC SJT
G
D
S
Figure 17: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate
current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 18 which features a positive
current peak during turn-on, a negative current peak during turn-off, and continuous gate current to remain on.
Figure 18: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 6 of 11

6 Page



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部品番号部品説明メーカ
GA50JT12-CAL

Junction Transistor

GeneSiC
GeneSiC


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