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MCR100-6 の電気的特性と機能

MCR100-6のメーカーはSemiHowです、この部品の機能は「Silicon Controlled Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MCR100-6
部品説明 Silicon Controlled Rectifier
メーカ SemiHow
ロゴ SemiHow ロゴ 




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MCR100-6 Datasheet, MCR100-6 PDF,ピン配置, 機能
MCR100-6
Silicon Controlled Rectifier
FEATURES
Repetitive Peak Off-State Voltage: 400V
R.M.S On–State Current (IT(RMS) = 0.8A)
Low Gate Trigger Current: 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit.
General Description
Semihow’s SCR product is a single directional PNPN device, has a
low gate trigger current and high stability in gate trigger current to
temperature, generally suitable for sensing and detection circuits.
VDRM = 400 V
IT(RMS) = 0.8 A
ITSM = 11 A
IGT = 200uA
Symbol
TO-92
K
G
A
Absolute Maximum Ratings (TJ=25unless otherwise specified )
Symbol
Parameter
Conditions
VDRM
VRRM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
ITSM Surge On-State Current
I2t Fusing Current
PGM
Forward Peak Gate Power
Dissipation
Sine wave, 50/60Hz, Gate open
Full sine wave, TC = 95.1oC
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
t = 10ms
TJ = 125 °C, pulse width ≤ 1.0us
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TJ = 125 °C, t = 8.3ms
TJ = 125 °C, pulse width ≤ 1.0us
TJ = 125 °C, pulse width ≤ 1.0us
Ratings
400
400
0.5
0.8
10/11
0.5
2
Unit
V
V
A
A
A
A2S
W
0.1 W
1
5
-40~+125
-40~+150
A
V
oC
oC
SEMIHOW REV.A0,March 2012

1 Page





MCR100-6 pdf, ピン配列
Typical Characteristics
0.6
180o
150o
120o
90o
0.4
60o
30o
0.2
0.0
0.0
0.1 0.2 0.3 0.4 0.5
Average on-state current, IT [A]
(AV)
0.6
Fig 1. Average Current vs. Power dissipation
130
120
110
100
90
80
70
0.0
30o 60o 90o 120o 150o 180o
0.1 0.2 0.3 0.4 0.5
Average on state current, I [A]
T(AV)
0.6
Fig 2. Average current vs. Case Temperature
10
P (2W)
GM
PG(AV)(0.1W)
1
25[oC]
VGD
0.1
1
10 100 1000
Gate current, IG [mA]
Fig 3. Gate power characteristics
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction temperature, T [oC]
J
Fig 5. Gate trigger current vs.
junction temperature
12
10
8 60Hz
50Hz
6
4
2
0
1 10 100
Time [cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction temperature, TJ[oC]
Fig 6. Gate trigger voltage vs.
junction temperature
SEMIHOW REV.A0,March 2012


3Pages


MCR100-6 電子部品, 半導体
Package Dimension
TO-92 TAPING
D0
F1 F2 P1
Item
Component pitch
Side lead to center of feed hole
Center lead to center of feed hole
Lead pitch
Carrier Tape width
Adhesive tape width
Tape feed hole location
Adhesive tape position
Center of feed hole to bottom of component
Center of feed hole to lead form
Component height
Tape feed hole diameter
P P2
Symbol
P
P1
P2
FI,F2
W
W0
W1
W2
H
H0
H1
D0
Dimension [mm]
Reference Tolerance
12.7
±0.5
3.85
±0.5
6.35
±0.5
2.5 +0.2/-0.1
18.0
+1.0/-0.5
6.0 ±0.5
9.0 ±0.5
1.0 MAX
19.5
±1
16.0
±0.5
27.0 max
4.0 ±0.2
SEMIHOW REV.A0,March 2012

6 Page



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共有リンク

Link :


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Sensitive Gate Silicon Controlled Rectifiers

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Taiwan Semiconductor
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