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HCD80R650E の電気的特性と機能

HCD80R650EのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCD80R650E
部品説明 N-Channel MOSFET
メーカ SemiHow
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HCD80R650E Datasheet, HCD80R650E PDF,ピン配置, 機能
March 2017
HCD80R650E
800V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
850
8
0.65
12
Unit
V
A
Ω
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Motor Control & LED Lighting Power
DC-DC Converters
Package & Internal Circuit
D-PAK
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…640V
Reverse diode dv/dt, VDS=0…640V, IDSID
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
±30
8
5
24
240
50
15
83
-55 to +150
300
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (minimum pad of 2 oz copper)
Junction-to-Ambient (* 1 in2 pad of 2 oz copper)
Typ.
--
--
--
Max.
1.5
110
50
Units
/W
SEMIHOW REV.A1, March 2017

1 Page





HCD80R650E pdf, ピン配列
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A1, March 2017


3Pages


HCD80R650E 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
SEMIHOW REV.A1, March 2017

6 Page



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部品番号部品説明メーカ
HCD80R650E

N-Channel MOSFET

SemiHow
SemiHow


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