DataSheet.jp

HCD80R650E PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HCD80R650E
部品説明 N-Channel MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



Total 7 pages
		

No Preview Available !

HCD80R650E Datasheet, HCD80R650E PDF,ピン配置, 機能
March 2017
HCD80R650E
800V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
850
8
0.65
12
Unit
V
A
Ω
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Motor Control & LED Lighting Power
DC-DC Converters
Package & Internal Circuit
D-PAK
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…640V
Reverse diode dv/dt, VDS=0…640V, IDSID
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
±30
8
5
24
240
50
15
83
-55 to +150
300
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (minimum pad of 2 oz copper)
Junction-to-Ambient (* 1 in2 pad of 2 oz copper)
Typ.
--
--
--
Max.
1.5
110
50
Units
/W
SEMIHOW REV.A1, March 2017

1 Page





ページ 合計 : 7 ページ
PDF
ダウンロード
[ HCD80R650E.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
HCD80R650E

N-Channel MOSFET

SemiHow
SemiHow

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap