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HCS65R600TのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HCS65R600T |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHCS65R600Tダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Dec 2015
HCS65R600T
650V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
700
7.5
0.6
14
Unit
V
A
ȍ
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
650
ρ30
7.5 *
4.7 *
22 *
160
29
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.3
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝͵ΖΔ͑ͣͦ͑͢͡
1 Page Typical Characteristics
20
VGS
Top : 15.0 V
10.0 V
8.0 V
15 7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
5
* Notes :
1. 300us Pulse Test
2. TC = 25oC
0
0 5 10 15 20 25
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.0
1.6
V = 10V
GS
1.2
0.8
VGS = 20V
0.4
Note : TJ = 25oC
0.0
0 4 8 12 16
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
104 C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
103 Ciss
102
Coss
101
* Note ;
1. VGS = 0 V
2. f = 1 MHz
100
0.1
1 10
VDS, Drain-Source Voltage [V]
Crss
100
Figure 5. Capacitance Characteristics
20 -55oC
15 25oC
10
150oC
5
* Notes :
1. VDS= 10V
2. 300us Pulse Test
0
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10 VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 7.5A
0
0 3 6 9 12 15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝͵ΖΔ͑ͣͦ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝͵ΖΔ͑ͣͦ͑͢͡
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
HCS65R600S | N-Channel Super Junction MOSFET | SemiHow |
HCS65R600T | N-Channel MOSFET | SemiHow |