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TSP65R950S1のメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | TSP65R950S1 |
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部品説明 | N-Channel MOSFET | ||
メーカ | Truesemi | ||
ロゴ | |||
このページの下部にプレビューとTSP65R950S1ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
TSP65R950S1
650V 4.5A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.85Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
650
4.5
2.9
12
±30
46
1
0.2
15
37
1.67
-55 to +150
300
Value
3.41
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
1 Page Typical Performance Characteristics
Figure 1: On-Region Characteristics@25°C
Drain-source voltage VDS (V)
Figure 2: On-Region Characteristics@125°C
Figure 3:Power Dissipation
Figure 4: On-Resistance vs. Junction Temperature
TJ (°C)
Figure 5: Break Down vs. Junction
Temperature
© 2015 Truesemi Semiconductor Corporation
Figure 6: Body-Diode Characteristics
3
www.truesemi.com
3Pages Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
6
www.truesemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
TSP65R950S1 | N-Channel MOSFET | Truesemi |