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TSD70R1K1S1 の電気的特性と機能

TSD70R1K1S1のメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSD70R1K1S1
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSD70R1K1S1 Datasheet, TSD70R1K1S1 PDF,ピン配置, 機能
TSD70R1K1S1/TSU70R1K1S1
700V 4.5A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 750V @TJ = 150
• Typ. RDS(on) = 0.95Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
TSD70R1K1S1
TSU70R1K1S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
700
4.5*
2.9*
12*
±30
46
1
0.2
15
37
0.8
-55 to +150
300
Value
3.41
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
Unit
/W
/W
/W
www.truesemi.com

1 Page





TSD70R1K1S1 pdf, ピン配列
Typical Performance Characteristics
Figure 1: On-Region Characteristics@25°C
Figure 2: On-Region Characteristics@125°C
Figure 3:Power Dissipation
Figure 4: On-Resistance vs. Junction Temperature
Figure 5: Break Down vs. Junction
Temperature
© 2015 Truesemi Semiconductor Corporation
Figure 6: Body-Diode Characteristics
3
www.truesemi.com


3Pages


TSD70R1K1S1 電子部品, 半導体
Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
6
www.truesemi.com

6 Page



ページ 合計 : 9 ページ
 
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部品番号部品説明メーカ
TSD70R1K1S1

N-Channel MOSFET

Truesemi
Truesemi


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