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PDF TSD60R580WT Data sheet ( Hoja de datos )
| Número de pieza | TSD60R580WT | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSD60R580WT/TSU60R580WT
600V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 600V @TJ = 25 ℃
• Typ. RDS(on) = 0.5Ω
• Ultra Low gate charge (typ. Qg = 14.5nC)
• 100% avalanche tested
TSD60R580WT
TSU60R580WT
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
PD Power Dissipation (TC = 25℃)
TJ, TSTG
Operating and Storage Temperature
Range
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Value
600
7
21
±30
162
1.4
0.2
63
-55 to +150
Value
2.0
62
Unit
V
A
A
V
mJ
A
mJ
W
℃
Unit
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
www.truesemi.com
1 page  
Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
5
www.truesemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSD60R580WT.PDF ] | |
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