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PDF TSI7N60M Data sheet ( Hoja de datos )
| Número de pieza | TSI7N60M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSB7N60M/TSI7N60M
600V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
• 7.0A,600V,Max.RDS(on)=1.3 Ω @ VGS =10V
• Low gate charge(typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TSB7N60M
TSI7N60M
TO-263
TO-262
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25℃
TC = 100℃
Pulsed Drain Current
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TSB7N60M TSI7N60M
600
± 30
7.0 7.0*
4.2 4.2*
28 28*
245
14.7
4.5
147 48
1.17 0.38
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSB7N60M TSI7N60M
0.85 2.6
0.5 --
62.5 62.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
1 page  
Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TSI7N60M.PDF ] | |
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