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TSF13N65M の電気的特性と機能

TSF13N65MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSF13N65M
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSF13N65M Datasheet, TSF13N65M PDF,ピン配置, 機能
TSF13N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 13A,650V,Max.RDS(on)=0.47 Ω @ VGS =10V
• Low gate charge(typical 44nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
IAR
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive avalanche current
(Note 1)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Value
650
± 30
13*
8.4*
48*
860
23.1
16
48
0.38
-55 to +150
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Value
2.6
62.5
Units
V
V
A
A
A
mJ
mJ
A
W
W/
Units
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com

1 Page





TSF13N65M pdf, ピン配列
Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


3Pages


TSF13N65M 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
dv/dt controlled by RG
IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
TSF13N65M

N-Channel MOSFET

Truesemi
Truesemi
TSF13N65MR

N-Channel MOSFET

Truesemi
Truesemi


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