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TSD18N20MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | TSD18N20M |
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部品説明 | N-Channel MOSFET | ||
メーカ | Truesemi | ||
ロゴ | |||
このページの下部にプレビューとTSD18N20Mダウンロード(pdfファイル)リンクがあります。 Total 8 pages
TSD18N20M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V
• Low gate charge(typical 22nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
TC = 25℃
TC = 100℃
IDM Pulsed Drain Current
(Note 1)
IAS Single Pulsed Avalanche Current (Note 2)
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
IAR Repetitive Avalanche current
(Note 1)
PD Power Dissipation (TC = 25℃)
TJ, TSTG
Operating and Storage Temperature Range
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Value
200
± 30
18*
11.3*
72*
18
453
13.9
18
70
-55 to +150
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Typ Max
-- 1.79
-- 50
Units
V
V
A
A
A
A
Mj
mJ
A
W
℃
Units
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
1 Page Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
3Pages Fig 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ TSD18N20M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
TSD18N20M | N-Channel MOSFET | Truesemi |