DataSheet.jp

TSD18N20M の電気的特性と機能

TSD18N20MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSD18N20M
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




このページの下部にプレビューとTSD18N20Mダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

TSD18N20M Datasheet, TSD18N20M PDF,ピン配置, 機能
TSD18N20M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V
• Low gate charge(typical 22nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
TC = 25
TC = 100
IDM Pulsed Drain Current
(Note 1)
IAS Single Pulsed Avalanche Current (Note 2)
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
IAR Repetitive Avalanche current
(Note 1)
PD Power Dissipation (TC = 25)
TJ, TSTG
Operating and Storage Temperature Range
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Value
200
± 30
18*
11.3*
72*
18
453
13.9
18
70
-55 to +150
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Typ Max
-- 1.79
-- 50
Units
V
V
A
A
A
A
Mj
mJ
A
W
Units
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com

1 Page





TSD18N20M pdf, ピン配列
Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com


3Pages


TSD18N20M 電子部品, 半導体
Fig 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
dv/dt controlled by RG
IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ TSD18N20M データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TSD18N20M

N-Channel MOSFET

Truesemi
Truesemi


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap