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TSP740M の電気的特性と機能

TSP740MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSP740M
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSP740M Datasheet, TSP740M PDF,ピン配置, 機能
TSP740M/TSF740M
400V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 10.5A,400V,Max.RDS(on)=0.53 Ω @ VGS =10V
• Low gate charge(typical 30nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TSP740M TSF740M
400
±30
10.5 10.5*
6.6 6.6*
42 42*
378
13.9
4.5
139 45.5
1.11 0.36
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSP740M
0.90
0.5
62.5
TSF740M
2.75
--
62.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com

1 Page





TSP740M pdf, ピン配列
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


3Pages


TSP740M 電子部品, 半導体
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
BVDSS
IAS
EAS =
--1--
2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t)
Time
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com

6 Page



ページ 合計 : 9 ページ
 
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部品番号部品説明メーカ
TSP740M

N-Channel MOSFET

Truesemi
Truesemi


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