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TSF840M の電気的特性と機能

TSF840MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSF840M
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSF840M Datasheet, TSF840M PDF,ピン配置, 機能
TSP840M / TSF840M
500V N-Channel MOSFET
General Description
This Pow er MOSFET is produced using Tr uesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to
minimize o n-state r esistance, pr ovide superior switching
performance, and withstand high ener gy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency sw itched mode power supp lies,
active power factor corr ection based on half br idge
topology.
Features
• 9.0A, 500V, RDS(on) = 0.80@VGS = 10 V
• Low gate charge ( typical 30nC)
• Fast wsitching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
◀▲
{G
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP840M
TSF840M
500
9.0 9.0*
5.4 5.4 *
36 36 *
± 30
360
13.9
4.5
139 45.5
1.11 0.36
-55 to +150
300
TSP840M
0.90
0.5
62.5
TSF840M
2.75
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

1 Page





TSF840M pdf, ピン配列
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics


3Pages


TSF840M 電子部品, 半導体
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
EAS=--21-- LIAS2
BVDSS
--------------------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
DUT
VDD
VDS(t)
tp Time

6 Page



ページ 合計 : 7 ページ
 
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ダウンロード
[ TSF840M データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
TSF840M

N-Channel MOSFET

Truesemi
Truesemi
TSF840MR

N-Channel MOSFET

Truesemi
Truesemi


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