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TSB8N65MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | TSB8N65M |
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部品説明 | N-Channel MOSFET | ||
メーカ | Truesemi | ||
ロゴ | |||
このページの下部にプレビューとTSB8N65Mダウンロード(pdfファイル)リンクがあります。 Total 7 pages
TSB8N65M / TSI8N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V
• Low gate charge ( typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSB8N65M
TSI8N65M
650
7.5 7.5 *
4.5 4.5 *
30 30 *
30
260
14.7
4.5
147 48
1.18 0.38
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSB8N65M
0.85
0.5
62.5
TSI8N65M
2.6
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 Page Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3Pages Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
EAS=--21-- LIAS2
BVDSS
--------------------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
DUT
VDD
VDS(t)
tp Time
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ TSB8N65M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
TSB8N65M | N-Channel MOSFET | Truesemi |