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TSI8N60M の電気的特性と機能

TSI8N60MのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSI8N60M
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSI8N60M Datasheet, TSI8N60M PDF,ピン配置, 機能
TSB8N60M / TSI8N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using True semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
.
D
Features
- 7.5A, 600V, RDS(on) = 1.2@VGS = 10 V
- Low gate charge ( typical 29nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TSB8N60M / TSI8N60M
600
7.5
4.6
30
±30
230
7.5
14.7
4.5
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
http://www.truesemi.com
Typ Max Units
-- 0.85 /W
-- 0.5 /W
-- 62.5 /W
Rev. 00 October . 2012

1 Page





TSI8N60M pdf, ピン配列
Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
3.5
3.0
2.5 VGS = 10V
2.0
1.5
VGS = 20V
1.0
0.5
0
Note : TJ = 25
5 10 15 20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
1000
500
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 7.5A
0
0 10 20 30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
http://www.truesemi.com
Rev. 00 October . 2012


3Pages


TSI8N60M 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
ddvv//ddttccoonnttrroolllleeddbbyyRGG
IISScDoncotrnotlrloeldlebdybDyuptyulFseacpteorriod ?
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D=
--G--a--te--P--u--ls--e--W---id--t-h----
Gate Pulse Period
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
10V
VDD
http://www.truesemi.com
Rev. 00 October . 2012

6 Page



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部品番号部品説明メーカ
TSI8N60M

N-Channel MOSFET

Truesemi
Truesemi


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